2 March 2017 Near-IR (1 – 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO
Author Affiliations +
Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101050Q (2017) https://doi.org/10.1117/12.2255763
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
The plasmonic resonance wavelength λres in ZnO doped with 3wt%Ga2O3 can be controlled over the range 1 – 4 μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ = 185 – 3200 nm, (energy range, E = 6.7 – 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is then determined from a Drude-theory analysis of R vs E that yields fitting parameters nopt (optical carrier concentration), μopt (optical mobility), high-frequency dielectric constant ε, and thickness d, at each annealing temperature TA. The validity of this process is confirmed by comparison of ε with literature values, and comparison of nopt and μopt with analogous quantities n and μH measured by the Hall-effect.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David C. Look, David C. Look, Kevin D. Leedy, Kevin D. Leedy, Gordon J. Grzybowski, Gordon J. Grzybowski, Bruce B. Claflin, Bruce B. Claflin, } "Near-IR (1 – 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050Q (2 March 2017); doi: 10.1117/12.2255763; https://doi.org/10.1117/12.2255763
PROCEEDINGS
13 PAGES + PRESENTATION

SHARE
Back to Top