Monolithic integration of metal-ferroelectric-semiconductor heterostructure using atomic layer deposition

Edward L. Lin; Shen Hu; John G. Ekerdt

doi:10.1117/12.2254196

Translator Disclaimer

24 February 2017 Monolithic integration of metal-ferroelectric-semiconductor heterostructure using atomic layer deposition

Edward L. Lin, Shen Hu, John G. Ekerdt

Author Affiliations +

Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 1010519 (2017) https://doi.org/10.1117/12.2254196
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Integration of perovskite oxides with silicon and germanium can enable the realization of novel electronics device designs and the improvement of device performance. In particular, the wide variety of perovskite oxides and their ability to grow epitaxially on silicon and germanium allows the design of monolithically integrated semiconductor devices. The fabrication of monolithically integrated metal-ferroelectric-semiconductor structures is reported. Out-of-plane orientation of BaTiO₃ ferroelectric film is demonstrated, and process considerations to ensure oxide electrode conductivity are discussed. The structures reported here demonstrate the feasibility of fabricating ferroelectric field effect devices that are monolithically integrated into silicon and/or germanium platforms.

Conference Presentation

Citation Download Citation

Edward L. Lin, Shen Hu, and John G. Ekerdt "Monolithic integration of metal-ferroelectric-semiconductor heterostructure using atomic layer deposition", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 1010519 (24 February 2017); https://doi.org/10.1117/12.2254196

ACCESS THE FULL ARTICLE