24 February 2017 Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film
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Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101051M (2017) https://doi.org/10.1117/12.2260824
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
High quality germanium doped β-Ga2O3 epitaxial film was grown by PMBE technique and fabricated into a vertical type Schottky photodiode with a Pt/nGa2O3/n+Ga2O3(010) structure. The photodiode exhibited excellent rectifying characteristics with a turn on voltage ~ 1V and near zero bias leakage current ~ 100 fA. The photoresponse measurement showed a true solar blind sensitivity with cutoff wavelength ~260 nm and an out of band rejection ratio of ~104. A maximum responsivity of 0.09 A/W at 230 nm was measured at zero bias, corresponding to an external quantum efficiency of ~52 %. The time response of the photovoltaic diode is in the millisecond range and has no long-time decay component which is very common in the MSM photoconductive wide bandgap devices. The photodiode performance remains stable up to 300°C, suggesting its potential use for high temperature applications.
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Fikadu Alema, Fikadu Alema, Brian Hertog, Brian Hertog, Andrei V. Osinsky, Andrei V. Osinsky, Partha Mukhopadhyay, Partha Mukhopadhyay, Mykyta Toporkov, Mykyta Toporkov, Winston V. Schoenfeld, Winston V. Schoenfeld, Elaheh Ahmadi, Elaheh Ahmadi, James Speck, James Speck, } "Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051M (24 February 2017); doi: 10.1117/12.2260824; https://doi.org/10.1117/12.2260824
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