Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film

Fikadu Alema; Brian Hertog; Andrei V. Osinsky; Partha Mukhopadhyay; Mykyta Toporkov; Winston V. Schoenfeld; Elaheh Ahmadi; James Speck

doi:10.1117/12.2260824

24 February 2017 Vertical solar blind Schottky photodiode based on homoepitaxial Ga₂O₃ thin film

Fikadu Alema, Brian Hertog, Andrei V. Osinsky, Partha Mukhopadhyay, Mykyta Toporkov, Winston V. Schoenfeld, Elaheh Ahmadi, James Speck

Author Affiliations +

Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101051M (2017) https://doi.org/10.1117/12.2260824
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

High quality germanium doped β-Ga₂O₃ epitaxial film was grown by PMBE technique and fabricated into a vertical type Schottky photodiode with a Pt/nGa₂O₃/n⁺Ga₂O₃(010) structure. The photodiode exhibited excellent rectifying characteristics with a turn on voltage ~ 1V and near zero bias leakage current ~ 100 fA. The photoresponse measurement showed a true solar blind sensitivity with cutoff wavelength ~260 nm and an out of band rejection ratio of ~10⁴. A maximum responsivity of 0.09 A/W at 230 nm was measured at zero bias, corresponding to an external quantum efficiency of ~52 %. The time response of the photovoltaic diode is in the millisecond range and has no long-time decay component which is very common in the MSM photoconductive wide bandgap devices. The photodiode performance remains stable up to 300°C, suggesting its potential use for high temperature applications.

Citation Download Citation

Fikadu Alema, Brian Hertog, Andrei V. Osinsky, Partha Mukhopadhyay, Mykyta Toporkov, Winston V. Schoenfeld, Elaheh Ahmadi, and James Speck "Vertical solar blind Schottky photodiode based on homoepitaxial Ga₂O₃ thin film", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051M (24 February 2017); https://doi.org/10.1117/12.2260824

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