24 February 2017 Solution-deposited Al2O3 dielectric towards fully-patterned thin film transistors on shape memory polymer
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Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101051Z (2017) https://doi.org/10.1117/12.2250393
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Solution deposition has potential for highly cost-effective fabrication of thin film transistors (TFTs) on flexible substrates. Shape memory polymer (SMP), with improved thermal mechanical response, may enable large-area flexible devices, as well as add control to the product shape and modulus. Until date, TFTs made on SMP substrates have been limited to vacuum-deposition methods. While TFTs processed through more economical solution-based techniques achieve device performance close to their vacuum-processed counterparts, they have not yet been demonstrated on SMP substrates due to the required high calcination temperatures (> 500 °C). To take full advantages of SMP, low temperature (< 200 °C) solution-based processing is highly desirable. Compatibility of the deposition process with the substrate and previously deposited films is essential. Here, we develop a process that incorporates direct UV patterning that would allow for fabrication of oxide TFTs on SMP using a reduced number of processing steps. Rigid In2O3 TFTs, deposited from solution-combustion synthesis, are fabricated on Si substrates with different solution-deposited dielectrics to evaluate their potential for transferring to SMP.
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Trey B. Daunis, Gerardo Gutierrez-Heredia, Ovidio Rodriguez-Lopez, Jian Wang, Walter E. Voit, Julia W. P. Hsu, "Solution-deposited Al2O3 dielectric towards fully-patterned thin film transistors on shape memory polymer", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051Z (24 February 2017); doi: 10.1117/12.2250393; https://doi.org/10.1117/12.2250393
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