Integrated graphene photodetector based on a gate- controlled pn- junction (Conference Presentation)

Simone Schuler; Daniel Schall; Daniel Neumaier; Lukas Dobusch; Ole Bethge; Benedikt Schwarz; Michael Krall; Thomas Mueller

doi:10.1117/12.2251338

19 April 2017 Integrated graphene photodetector based on a gate- controlled pn- junction (Conference Presentation)

Simone Schuler, Daniel Schall, Daniel Neumaier, Lukas Dobusch, Ole Bethge, Benedikt Schwarz, Michael Krall, Thomas Mueller

Author Affiliations +

Proceedings Volume 10106, Integrated Optics: Devices, Materials, and Technologies XXI; 1010611 (2017) https://doi.org/10.1117/12.2251338
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

The integration of electrical and optical components on a single chip, favourable silicon, is a major goal in research. Thereby, a bottleneck is the integration of active and passive optical elements. Graphene, with its electrically tuneable absorption and ultrafast photoresponse, is a promising candidate to move a step closer towards high-speed on-chip integration. We fabricated a dual-gate tuneable pn-junction graphene phototdetector to investigate the relevant conversion mechanisms. The photodector is integrated on a silicon slot waveguide, which has twofold function. First, the two silicon strips of the slot waveguide are utilized as dual gate electrodes to create an electrically controllable pn-junction in the graphene. Second, the slot waveguide design allows confinement of light in subwavelength dimension. The confined light is directly absorbed in the slot between the n- and p-doped regions. At zero bias the conversion is dominated by the photo-thermoelectric effect, where we achieved a responsivity of 35 mA/W. While by applying a low bias of 300 mV, the responsivity increased to 76 mA/W due to an additional photoconductive contribution. The photoresponse of photodetectors based on the photo-thermoelectric effect arises from hot electrons, rather than lattice heating. Therefore, we could demonstrate that our graphene integrated photodetector based on a tuneable pn-junction reaches a setup-limited 3dB-bandwidth of 65 GHz, which is the highest value reported for a graphene-based phototedetector.

Conference Presentation

Citation Download Citation

Simone Schuler, Daniel Schall, Daniel Neumaier, Lukas Dobusch, Ole Bethge, Benedikt Schwarz, Michael Krall, and Thomas Mueller "Integrated graphene photodetector based on a gate- controlled pn- junction (Conference Presentation)", Proc. SPIE 10106, Integrated Optics: Devices, Materials, and Technologies XXI, 1010611 (19 April 2017); https://doi.org/10.1117/12.2251338

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KEYWORDS

Graphene

Photodetectors

Silicon

Waveguides

Optical components

Absorption

Electrodes

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