17 February 2017 Butt-coupled interface between stoichiometric Si3N4 and thin-film plasmonic waveguides
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Abstract
Plasmonic technology has emerged as the most promising candidate to revolutionize future photonic-integrated-circuits (PICs) and deliver performance breakthroughs in diverse application areas by providing increased light-matter interaction at the nanometer scale, overcoming the diffraction limit. However, high insertion losses of plasmonic devices impede their practical deployment in PICs. To overcome this hurdle, selective integration of individual plasmonic devices on low-loss photonic platforms is considered, allowing for enhanced chip-scale functionalities with realistic power budgets. In this context, highly-efficient and fabrication-tolerant optical interfaces for co-planar plasmonic and photonic waveguides become essential, bridging these two “worlds” and ease combined high-volume manufacturing. Herein, a TM-mode butt-coupled interface for stoichiometric Si3N4 and Au-based thin-film plasmonic waveguides is proposed aiming to be utilized for bio-sensing applications. Following a systematic design process, this new configuration has been analyzed through 3D FDTD numerical simulations demonstrating coupling efficiencies up to 64% at the wavelength of 1.55 μm, with increased fabrication tolerance compared to silicon based waveguide alternatives.
Conference Presentation
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G. Dabos, D. Ketzaki, D. Tsiokos, N. Pleros, "Butt-coupled interface between stoichiometric Si3N4 and thin-film plasmonic waveguides", Proc. SPIE 10106, Integrated Optics: Devices, Materials, and Technologies XXI, 1010616 (17 February 2017); doi: 10.1117/12.2252254; https://doi.org/10.1117/12.2252254
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