20 February 2017 Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications
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Abstract
We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.
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Sebastian Lourdudoss, Carl Junesand, Himanshu Kataria, Wondwosen Metaferia, Giriprasanth Omanakuttan, Yan-Ting Sun, Zhechao Wang, Fredrik Olsson, "Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications", Proc. SPIE 10107, Smart Photonic and Optoelectronic Integrated Circuits XIX, 1010705 (20 February 2017); doi: 10.1117/12.2255607; https://doi.org/10.1117/12.2255607
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