Using the intrinsic properties of silicon micro-ring modulators for characterization of RF termination

Zhao Wang; Andrew P. Knights

doi:10.1117/12.2254744

20 February 2017 Using the intrinsic properties of silicon micro-ring modulators for characterization of RF termination

Zhao Wang, Andrew P. Knights

Author Affiliations +

Proceedings Volume 10107, Smart Photonic and Optoelectronic Integrated Circuits XIX; 101070G (2017) https://doi.org/10.1117/12.2254744
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We describe a direct experimental method to determine the effective driving voltage (Vpp) applied to a silicon photonic modulator possessing an impedance mismatch between the unterminated capacitive load and input source. This method thus permits subsequent estimation of the power consumption of an imperfectly terminated device as well as a deduction of load impedance for optimization of termination design. The capacitive load in this paper is a silicon micro-ring modulator with an integrated p-n junction acting as a phase shifter. The RF reflection under high-speed drive is directly determined from observation of the eye-diagram following measurement of the power transfer function for various junction bias.

Citation Download Citation

Zhao Wang and Andrew P. Knights "Using the intrinsic properties of silicon micro-ring modulators for characterization of RF termination", Proc. SPIE 10107, Smart Photonic and Optoelectronic Integrated Circuits XIX, 101070G (20 February 2017); https://doi.org/10.1117/12.2254744

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