Proceedings Volume 10108 is from: Logo
Jan 28 - Feb 2 2017
San Francisco, California, United States
Front Matter: Volume 10108
Proc. SPIE 10108, Front Matter: Volume 10108, 1010801(5 June 2017);doi: 10.1117/12.2276024
Proc. SPIE 10108, Passively biased resonantly enhanced silicon photonics modulator with high optical bandwidth, 1010802(13 March 2017);doi: 10.1117/12.2253845
Proc. SPIE 10108, New materials for modulators and switches in silicon photonics (Conference Presentation), 1010803();doi: 10.1117/12.2253679
Proc. SPIE 10108, Numerical analysis and optimization of high-speed silicon microring resonator modulators using high-performance carrier-depletion phase shifters, 1010804(20 February 2017);doi: 10.1117/12.2252108
Proc. SPIE 10108, All-optical switch with 1 ps response time enabled by graphene oxide infiltrated subwavelength grating waveguide, 1010805(20 February 2017);doi: 10.1117/12.2252640
Proc. SPIE 10108, High speed and low power consumption modulator based on electro-optic polymer infiltrated subwavelength grating waveguide ring resonator (Conference Presentation), 1010806();doi: 10.1117/12.2253092
Waveguide Devices I
Proc. SPIE 10108, Silicon photonic device applications using micro-opto-electro-mechanical index perturbation, 1010808(20 February 2017);doi: 10.1117/12.2250888
Proc. SPIE 10108, Broadband silicon bridge waveguide polarization beam splitter, 101080A(20 February 2017);doi: 10.1117/12.2251655
Proc. SPIE 10108, Second order add/drop filter with a single ring resonator, 101080B(20 February 2017);doi: 10.1117/12.2252146
Light Emission I
Proc. SPIE 10108, Inductively coupled plasma etching of germanium tin for the fabrication of photonic components, 101080C(20 February 2017);doi: 10.1117/12.2252280
Proc. SPIE 10108, Luminescence of strained Ge on GeSn virtual substrate grown on Si (001), 101080D(20 February 2017);doi: 10.1117/12.2249564
Proc. SPIE 10108, Laser and transistor material on Si substrate, 101080E(20 February 2017);doi: 10.1117/12.2252383
Proc. SPIE 10108, New experimental evidence for nature of the band gap of GeSn alloys (Conference Presentation), 101080F();doi: 10.1117/12.2252724
Silicon-based Optical Interconnects
Proc. SPIE 10108, Accurate Performance Evaluation of Single-channel Silicon Optical Interconnects Operating in the Pulsed Regime (Conference Presentation), 101080I();doi: 10.1117/12.2251886
Silicon-Photonic Systems I
Proc. SPIE 10108, High-brightness lasers on silicon by beam combining, 101080K(20 February 2017);doi: 10.1117/12.2252310
Proc. SPIE 10108, Thermal stress in an optical silica fiber embedded (soldered) into silicon, 101080L(20 February 2017);doi: 10.1117/12.2247035
Proc. SPIE 10108, Development of new MPPC with higher NIR sensitivity and wider dynamic range, 101080M(20 February 2017);doi: 10.1117/12.2250199
Proc. SPIE 10108, Design of an 8-tap CMOS lock-in pixel with lateral electric field charge modulator for highly time-resolved imaging, 101080N(20 February 2017);doi: 10.1117/12.2251788
Silicon-Photonic Systems II
Proc. SPIE 10108, Energy-efficient millimeter-wave generation using silicon photonics, 101080O(20 February 2017);doi: 10.1117/12.2253014
Proc. SPIE 10108, Miniature, low-cost, 200 mW, infrared thermal emitter sealed by wafer-level bonding, 101080P(20 February 2017);doi: 10.1117/12.2247815
Proc. SPIE 10108, CMOS-compatible optical AND, OR, and XOR gates using voltage-induced free-carrier dispersion and stimulated Raman scattering, 101080Q(20 February 2017);doi: 10.1117/12.2251616
Proc. SPIE 10108, Ultra-fast secure communication with complex systems in classical channels (Conference Presentation), 101080R();doi: 10.1117/12.2251940
Waveguide Devices II
Proc. SPIE 10108, TiO2-coated single and multi-wavelength shifted Bragg grating in SOI platform as add-drop filter (Conference Presentation), 101080U();doi: 10.1117/12.2251807
Proc. SPIE 10108, Fabrication tolerant flat-top interleavers, 101080V(20 February 2017);doi: 10.1117/12.2252110
Proc. SPIE 10108, Analytical model for the analysis of the electromagnetic field in grating couplers, 101080W(20 February 2017);doi: 10.1117/12.2250522
Silicon-based Optical Sensors
Proc. SPIE 10108, A high-efficiency low-noise signal amplification mechanism for photodetectors, 101080X(20 February 2017);doi: 10.1117/12.2253792
Proc. SPIE 10108, Silicon hybrid SPAD with high-NIR-sensitivity for TOF applications, 101080Y(20 February 2017);doi: 10.1117/12.2250165
Proc. SPIE 10108, Photonic integrated circuits for multi-color laser engines, 101080Z(2 March 2017);doi: 10.1117/12.2250758
Proc. SPIE 10108, High-Q resonance near zero wave vector in photonic crystal slab for label-free sensing, 1010810(20 February 2017);doi: 10.1117/12.2251548
Proc. SPIE 10108, Ultra-sensitive silicon-photonic on-chip sensor using microfabrication technology, 1010811(20 February 2017);doi: 10.1117/12.2251035
Mid-IR Silicon Photonics
Proc. SPIE 10108, Ge-rich SiGe waveguides for mid-infrared photonics, 1010812(20 February 2017);doi: 10.1117/12.2252832
Proc. SPIE 10108, Silicon-based GeSn photodetector and light emitter towards mid-Infrared applications, 1010813(20 February 2017);doi: 10.1117/12.2253067
Proc. SPIE 10108, Mid-infrared SOI micro-ring modulator operating at 2.02 microns, 1010814(20 February 2017);doi: 10.1117/12.2250586
Fabrication and Manufacturing of Silicon Photonics
Proc. SPIE 10108, Improvement of sidewall roughness of sub-micron silicon-on-insulator waveguides for low-loss on-chip links, 1010816(23 February 2017);doi: 10.1117/12.2250344
Proc. SPIE 10108, Towards autonomous testing of photonic integrated circuits, 1010817(20 February 2017);doi: 10.1117/12.2251315
Proc. SPIE 10108, Passive photonic components and germanium contacts for a 200mm germanium-on-insulator photonic platform (Conference Presentation), 1010818();doi: 10.1117/12.2252404
Proc. SPIE 10108, Integration and modeling of photonic devices suitable for high performance computing and data center applications, 1010819(20 February 2017);doi: 10.1117/12.2249851
Light Emission II
Proc. SPIE 10108, Integrating III-V quantum dot lasers on silicon substrates for silicon photonics, 101081A(20 February 2017);doi: 10.1117/12.2249761
Proc. SPIE 10108, High-quality and homogeneous 200-mm GeOI wafers processed for high strain induction in Ge, 101081B(20 February 2017);doi: 10.1117/12.2251790
Proc. SPIE 10108, Optical study of strain-free GeSn nanowires, 101081C(20 February 2017);doi: 10.1117/12.2252628
Poster Session
Proc. SPIE 10108, Bandwidth and center wavelength tunable micro-ring optical filter with Vernier effect by four spectrum combination, 101081E(20 February 2017);doi: 10.1117/12.2250037
Proc. SPIE 10108, Dynamic routing control through bends for Si sub-micrometer optical interconnects, 101081F(20 February 2017);doi: 10.1117/12.2250638
Proc. SPIE 10108, Diffusion doped plasma dispersion silicon modulators, 101081G(20 February 2017);doi: 10.1117/12.2251464
Proc. SPIE 10108, Photonic crystal ring resonator: a promising device for a multitude of applications, 101081J(20 February 2017);doi: 10.1117/12.2252702
Proc. SPIE 10108, Dynamic optical control of silicon nanoparticle scattering in the near and mid-IR, 101081N(20 February 2017);doi: 10.1117/12.2254393
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