20 February 2017 Broadband silicon bridge waveguide polarization beam splitter
Author Affiliations +
Proceedings Volume 10108, Silicon Photonics XII; 101080A (2017) https://doi.org/10.1117/12.2251655
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
We have successfully fabricated and measured our silicon bridge waveguide polarization beam splitter (PBS). Our proposed PBS is based on a bend directional coupler with a bend bridge waveguide and is experimentally realized using silicon waveguide thickness of 220 nm and 250 nm, which are the commonly used silicon thickness for silicon photonics manufacturing. Our experimental results demonstrated high extinction ratio of > 20 dB for the TE-like mode, and > 15 dB for the TM-like mode across a broad bandwidth of 90 nm that covers the entire C-band with a small footprint of ~18×9 μm2. On-chip high performance PBS is important for polarization diversity in integrated photonics, and for communication applications such as dual-polarization quadrature phase-shift keying (DP-QPSK) modulation.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Y. L. Ang, Thomas Y. L. Ang, Jun Rong Ong, Jun Rong Ong, Soon Thor Lim, Soon Thor Lim, Bryan Pawlina, Bryan Pawlina, Ezgi Sahin, Ezgi Sahin, Ching Eng Png, Ching Eng Png, Hong Son Chu, Hong Son Chu, G. F. R. Chen, G. F. R. Chen, D. T. H. Tan, D. T. H. Tan, } "Broadband silicon bridge waveguide polarization beam splitter", Proc. SPIE 10108, Silicon Photonics XII, 101080A (20 February 2017); doi: 10.1117/12.2251655; https://doi.org/10.1117/12.2251655
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