20 February 2017 Laser and transistor material on Si substrate
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Proceedings Volume 10108, Silicon Photonics XII; 101080E (2017) https://doi.org/10.1117/12.2252383
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
In this work we study Ge structures grown on silicon substrates. We use photoluminescence and photoreflectance to determine both direct and indirect gap of Ge under tensile strain. The strain is induced by growing the Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled by a 30 band k·p model based on first principles calculations. Characterization techniques show very good agreement with the calculated energy values.
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Dzianis Saladukha, Tomasz J. Ochalski, Felipe Murphy Armando, Michael B. Clavel, Mantu K. Hudait, "Laser and transistor material on Si substrate", Proc. SPIE 10108, Silicon Photonics XII, 101080E (20 February 2017); doi: 10.1117/12.2252383; https://doi.org/10.1117/12.2252383
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