20 February 2017 Development of new MPPC with higher NIR sensitivity and wider dynamic range
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Proceedings Volume 10108, Silicon Photonics XII; 101080M (2017) https://doi.org/10.1117/12.2250199
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
The Multi-Pixel Photon Counter (MPPC), which is also called a silicon photomultiplier (SiPM)1,2, is one promising candidate for automotive light detection and ranging (LIDAR)3. Due to high internal gain around 106, photon counting is possible and satisfies long range measurement. Compared to photo diodes (PDs) and avalanche photo diodes (APDs), read-out circuits for MPPCs are very simple because no external amplifier is needed. Conventional MPPCs have been developed for targeting blue scintillation light around 400 nm for positron emission tomography (PET) and high energy physics experiments. In this paper we report new near-infrared (NIR)-enhanced MPPCs whose development targets include 905 nm laser light for automotive LIDAR systems. Conventional MPPCs have a p-on-n structure and show 2% photon detection efficiency (PDE) at 905 nm. Our newly developed n-on-p MPPC achieved 7% PDE without greatly changing the impurity concentration profile of the depletion layer. This n-on-p MPPC has been released as an NIRenhanced MPPC: S13720-1325CS. For further improvement of NIR sensitivity, we tried several silicon wafers and process conditions of p-n junction profiles. Even though dark noise and the voltage range have to be modified, the latest sample shows 11% PDE, suggesting potential for further sensitivity improvement.
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Terumasa Nagano, Terumasa Nagano, Ryutaro Tsuchiya, Ryutaro Tsuchiya, Atsushi Ishida, Atsushi Ishida, Koei Yamamoto, Koei Yamamoto, } "Development of new MPPC with higher NIR sensitivity and wider dynamic range", Proc. SPIE 10108, Silicon Photonics XII, 101080M (20 February 2017); doi: 10.1117/12.2250199; https://doi.org/10.1117/12.2250199
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