Design of an 8-tap CMOS lock-in pixel with lateral electric field charge modulator for highly time-resolved imaging

Yuya Shirakawa; Min-Woong Seo; Keita Yasutomi; Keiichiro Kagawa; Nobukazu Teranishi; Shoji Kawahito

doi:10.1117/12.2251788

20 February 2017 Design of an 8-tap CMOS lock-in pixel with lateral electric field charge modulator for highly time-resolved imaging

Yuya Shirakawa, Min-Woong Seo, Keita Yasutomi, Keiichiro Kagawa, Nobukazu Teranishi, Shoji Kawahito

Author Affiliations +

Proceedings Volume 10108, Silicon Photonics XII; 101080N (2017) https://doi.org/10.1117/12.2251788
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Recently, CMOS time-resolved imaging devices are being widely used for scientific and medical applications. A fluorescence lifetime imaging microscopy (FLIM), which is a powerful analysis tool in fundamental physics as well as in the life science, is a typical application for the time-resolved imaging devices. For better time-resolution in the lock-in pixel design, a multi-tap pixel architecture is very effective and useful. In this paper, we have proposed an 8-tap CMOS lock-in pixel with lateral electric field charge modulator (LEFM) and demonstrated the effectiveness of designed pixel by CAD simulation. The proposed pixel makes possible to measure the highly time-resolved images with a high signal to noise ratio (SNR) and to observe various images of cells even if a sample has a multi-lifetime component. An 8-tap time-resolved CMOS image sensor chip is developed by 0.11μm 1P4M CIS process technology.

Citation Download Citation

Yuya Shirakawa, Min-Woong Seo, Keita Yasutomi, Keiichiro Kagawa, Nobukazu Teranishi, and Shoji Kawahito "Design of an 8-tap CMOS lock-in pixel with lateral electric field charge modulator for highly time-resolved imaging", Proc. SPIE 10108, Silicon Photonics XII, 101080N (20 February 2017); https://doi.org/10.1117/12.2251788

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