The emitters were optimized for radiation at λ=3.5 μm. Emission spectra by Fourier Transform Infrared Spectroscopy showed high emissivity in the wavelength range 3 – 10 μm at 35 mA driving current and 5.7 V bias, i.e. 200 mW power consumption. The emitter temperature was around 700 °C. The rise and fall times of the emitters were below 8 and 3 ms, respectively. The low thermal mass indicates that pulsed operation at frequencies around 100 Hz could be realized with about 90 % modulation depth. The measured characteristics were in good agreement with COMSOL simulations. Thus, the presented devices have lower power consumption, an order of magnitude higher modulation frequency, and a production cost reduced by 40 – 60%1-4 compared to available, individually packaged devices. The patented device sealing provides through-silicon conductors and enables direct surface mounting of the components.
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K. Schjølberg-Henriksen, J. Gjessing, K. A. H. Bakke, S. Hadzialic, D. T. Wang, "Miniature, low-cost, 200 mW, infrared thermal emitter sealed by wafer-level bonding," Proc. SPIE 10108, Silicon Photonics XII, 101080P (20 February 2017);