20 February 2017 Optical study of strain-free GeSn nanowires
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Proceedings Volume 10108, Silicon Photonics XII; 101081C (2017) https://doi.org/10.1117/12.2252628
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Here we describe a uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9%, the fabricated through a conventional catalytic bottom-up growth paradigm employing innovative catalysts and precursors. Optical characterization by means of temperature dependent photoluminescence is used to identify transition point from indirect to direct badgap of GeSn nanowires.
Conference Presentation
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Dzianis Saladukha, Dzianis Saladukha, Jessica Doherty, Jessica Doherty, Subhajit Biswas, Subhajit Biswas, Tomasz J. Ochalski, Tomasz J. Ochalski, Justin D. Holmes, Justin D. Holmes, } "Optical study of strain-free GeSn nanowires", Proc. SPIE 10108, Silicon Photonics XII, 101081C (20 February 2017); doi: 10.1117/12.2252628; https://doi.org/10.1117/12.2252628
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