20 February 2017 Optical study of strain-free GeSn nanowires
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Proceedings Volume 10108, Silicon Photonics XII; 101081C (2017) https://doi.org/10.1117/12.2252628
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Here we describe a uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9%, the fabricated through a conventional catalytic bottom-up growth paradigm employing innovative catalysts and precursors. Optical characterization by means of temperature dependent photoluminescence is used to identify transition point from indirect to direct badgap of GeSn nanowires.
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Dzianis Saladukha, Jessica Doherty, Subhajit Biswas, Tomasz J. Ochalski, Justin D. Holmes, "Optical study of strain-free GeSn nanowires", Proc. SPIE 10108, Silicon Photonics XII, 101081C (20 February 2017); doi: 10.1117/12.2252628; https://doi.org/10.1117/12.2252628
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