20 February 2017 Using quantum-dots to enable deep-UV sensitivity with standard silicon-based imaging detectors
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Proceedings Volume 10110, Photonic Instrumentation Engineering IV; 1011011 (2017); doi: 10.1117/12.2256137
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Improving the sensitivity of silicon-based CMOS and CCD in the deep-UV is an area of ongoing interest. Lumogen has been used for this purpose for many years but has several known issues including limitations to its use in both vacuum and radiation harsh environments. Quantum Dots (QD) offers a more robust alternative to Lumogen. The fluorescence wavelength of QDs is tunable and can be fabricated to match the peak sensor quantum efficiency. Aerosol jet printing (AJP) is being used for the deposition of QDs on a variety of substrates and on commercially available sensor arrays. While the films deposited onto various substrates have a surface morphology characterized by aggregate formations, the insight obtained will lead to much more uniform layers in the near future. Organic residues common to this process, that compromise the UV performance, have been minimized.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Ichiyama, Zoran Ninkov, Scott Williams, Ross Robinson, Suraj Bhaskaran, "Using quantum-dots to enable deep-UV sensitivity with standard silicon-based imaging detectors", Proc. SPIE 10110, Photonic Instrumentation Engineering IV, 1011011 (20 February 2017); doi: 10.1117/12.2256137; https://doi.org/10.1117/12.2256137
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KEYWORDS
Quantum dots

Printing

Luminescence

Quantum efficiency

Sensors

Ultraviolet radiation

Deep ultraviolet

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