Monolithically-integrated mid-infrared interband cascade lasers and photodetectors (Conference Presentation)

Hossein Lotfi; SM Shazzad Rassel; Lu Li; Cédric J. Corrége; Rui Q. Yang; Preston R. Larson; James A. Gupta; Matthew B. Johnson

doi:10.1117/12.2252542

28 April 2017 Monolithically-integrated mid-infrared interband cascade lasers and photodetectors (Conference Presentation)

Hossein Lotfi, SM Shazzad Rassel, Lu Li, Cédric J. Corrége, Rui Q. Yang, Preston R. Larson, James A. Gupta, Matthew B. Johnson

Author Affiliations +

Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 101110M (2017) https://doi.org/10.1117/12.2252542
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

The family of interband cascade (IC) IR devices includes: interband cascade lasers (ICLs), interband cascade IR photodetectors (ICIPs), and thermophotovoltaics (ICTPVs). To date, developments at the component level have resulted in power-efficient mid-IR ICLs with CW operation at room temperature and above as well as uncooled mid-IR low-noise and high-speed ICIPs. However, there has been little effort to integrate these devices on a single chip for an IR photonic system. Since an appropriately designed ICL can operate as an IR photodetector at zero bias, ICLs and ICIPs can be grown and fabricated on a single chip, enabling the on-chip integration of IR lasers and photodetectors for mid- and long-IR wavelengths. We report the first demonstration of monolithically integrated mid-IR IC devices operating at room temperature. The unit consists of a monolithically integrated ICL and ICIP fabricated using focused ion beam (FIB) milling. The base structure is a type-I ICL with quaternary GaInAsSb active regions. The laser peak emission wavelength is 3.1 μm at 20 ◦C and the 10% cut-off wavelength of the corresponding ICIP is 3.3 μm, which ensures sufficient photon absorption at the lasing wavelength. For a laser/detector unit (at 20 ◦C) with a 12 μm gap between laser mirror and detector, the open-circuit voltage of the ICIP is 1.06 V and its short-circuit current is 106 μA, resulting from the laser emission (2.6 mW/facet). These preliminary results demonstrate the practical application of integrated IC devices for high-temperature, high-bandwidth and power-efficient on-chip sensors and optical communication mid-IR photonic systems.

Conference Presentation

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Hossein Lotfi, SM Shazzad Rassel, Lu Li, Cédric J. Corrége, Rui Q. Yang, Preston R. Larson, James A. Gupta, and Matthew B. Johnson "Monolithically-integrated mid-infrared interband cascade lasers and photodetectors (Conference Presentation)", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101110M (28 April 2017); https://doi.org/10.1117/12.2252542

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KEYWORDS

Mid-IR

Photodetectors

Quantum cascade lasers

Photonics systems

Sensors

Continuous wave operation

Infrared imaging

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