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28 April 2017 Second-order nonlinearities in strained silicon photonic structures (Conference Presentation)
Pedro Damas, Xavier Le Roux, Mathias Berciano, Guillaume Marcaud, Carlos Alonso-Ramos, Daniel Benedikovic, Delphine Marris-Morini, Eric Cassan, Laurent Vivien
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Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 101110W (2017) https://doi.org/10.1117/12.2250301
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, silicon is a centrosymmetric crystal, i.e. silicon doesn’t have Pockels effect. Nevertheless, breaking the crystal symmetry of silicon can be used to overcome this limitation. This crystal modification is achieved by depositing a SiN high-stress overlayer. In this work, we present recent developments on the subject taking into account parasitic effects including plasma dispersion effect and fixed charge effect under an electric field. We theoretically and experimentally investigated Pockels effect in silicon waveguides and last results will be presented.
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Pedro Damas, Xavier Le Roux, Mathias Berciano, Guillaume Marcaud, Carlos Alonso-Ramos, Daniel Benedikovic, Delphine Marris-Morini, Eric Cassan, and Laurent Vivien "Second-order nonlinearities in strained silicon photonic structures (Conference Presentation)", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101110W (28 April 2017); https://doi.org/10.1117/12.2250301
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KEYWORDS
Silicon
Crystals
Photonic crystals
Silicon photonics
Nanotechnology
Dispersion
Optical communications
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