27 January 2017 HgCdTe APDs for low-photon number IR detection
Author Affiliations +
HgCdTe avalanche photodiodes offers a new horizon for observing spatial or temporal signals containing only a few infrared (IR) photons, enabling new science, telecommunication and defence applications. A large number of HgCdTe APD based detectors have been developed at CEA LETI to address the increasing number of applications in which a faint photonic information needs to be extracted from the noise of the proximity electronics used to sample the signal. The performance of HgCdTe APDs is directly related to the multiplication process and the dark current generation in the APDs. The impact of these parameters is presented as a function of the Cd composition and geometry of the APDs. The obtained and expected performance of HgCdTe APD detectors is reported for applications ranging from very low flux observations with long observations times to high data rate telecommunications with up to single photon resolution.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Rothman, J. Rothman, E. de Borniol, E. de Borniol, J. Abergel, J. Abergel, G. Lasfargues, G. Lasfargues, B. Delacourt, B. Delacourt, A. Dumas, A. Dumas, F. Gibert, F. Gibert, O. Boulade, O. Boulade, X. Lefoule, X. Lefoule, } "HgCdTe APDs for low-photon number IR detection", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011119 (27 January 2017); doi: 10.1117/12.2256175; https://doi.org/10.1117/12.2256175


MCT APD focal plane arrays for astronomy at CEA-LETI
Proceedings of SPIE (August 05 2016)
HgCdTe APDS for space applications
Proceedings of SPIE (November 17 2017)
Quantum communication and single-photon technologies
Proceedings of SPIE (June 29 2001)
Linear photon-counting with HgCdTe APDs
Proceedings of SPIE (May 22 2012)

Back to Top