27 January 2017 Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures
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Abstract
The knowledge of carrier concentration of doped or non-intentionally doped layer structures grown by Molecular Beam Epitaxy (MBE) is crucial to fabricate and manage design of new advanced photodetectors called "barrier structures". This communication reports on capacitance-voltage (C-V) study on MOS structure. Simulation to define specific MOS design, allowing doping layer concentration extraction by measurements, is performed. MOS structures based on InAs/GaSb Longwave infrared (LWIR) superlattice have been fabricated and characterized. Results obtained were analyzed and compared with simulations.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Rossignol, R. Rossignol, J. B. Rodriguez, J. B. Rodriguez, Q. Durlin, Q. Durlin, H. Aït-Kaci, H. Aït-Kaci, J. P. Perez, J. P. Perez, F. Martinez, F. Martinez, F. Gonzales Posada, F. Gonzales Posada, P. Christol, P. Christol, } "Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101111H (27 January 2017); doi: 10.1117/12.2251153; https://doi.org/10.1117/12.2251153
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