Using plasmon-induced resistance changes in a tunable metal grating for all-electronic readout

Borui Chen; Alec Cheney; Tianmu Zhang; Tim Thomay; Alexander Cartwright

doi:10.1117/12.2252158

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27 January 2017 Using plasmon-induced resistance changes in a tunable metal grating for all-electronic readout

Borui Chen, Alec Cheney, Tianmu Zhang, Tim Thomay, Alexander Cartwright

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Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 101111Q (2017) https://doi.org/10.1117/12.2252158
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this work, we take advantage of the resistive losses induced by plasmons excited at optical frequencies to design, fabricate and characterize a metal grating based CMOS-compatible light detector. A change of resistance is caused by increased electron scattering introduced by localized and delocalized surface plasmons in an applied current. We realize a spectral and polarization dependent detector that can be read out electronically. The optical response of the sensor can be tuned from the visible to IR regime by changing the geometry of the metal grating, which enables a variety of applications for an on-chip ultra-wideband plasmonic detector.

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Borui Chen, Alec Cheney, Tianmu Zhang, Tim Thomay, and Alexander Cartwright "Using plasmon-induced resistance changes in a tunable metal grating for all-electronic readout", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101111Q (27 January 2017); https://doi.org/10.1117/12.2252158

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