InGaAs-based resonant photodetector: a step towards a new generation (Conference Presentation)

Jean-Luc Pelouard

doi:10.1117/12.2252699

28 April 2017 InGaAs-based resonant photodetector: a step towards a new generation (Conference Presentation)

Jean-Luc Pelouard

Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 101111T (2017) https://doi.org/10.1117/12.2252699
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Invited abstract. The extreme light confinement provided by nanophotonic structures pushes toward revisiting the photodetector design. On the other hand introducing absorbing layers in nano-resonators demands dedicated electromagnetic design. This context opens the way for performance improvements and new functionalities, introducing the fourth generation of photo-detectors with promising features such as ultra-thin absorbing layers, device area much smaller than its optical cross-section and carved optical response. In this talk, I present a GMR InGaAs photo-detector dedicated for FPA applications, illustrating this global design and the cross-linked properties of the optical and semiconductor structures. In this "guided mode resonator", the semiconductor stack works as an optical guide. Its bottom part is structured in order to generate the first order diffraction modes in the semiconductor. Adjusting the coupling between the optical modes of the guide and those of the grating, allows optimizing this structure for various applications as optimum absorption at 1.55 μm or in the SWIR band [M. Verdun et al, Appl. Phys. Lett. 108 053501 (2016)]. The photodiode is based on an InP/InGaAs double heterojunction. The small thickness of the InGaAs absorbing layer (100 – 200 nm) allows suppressing the diffusion currents as well as reducing the generation-recombination currents in the space charge layer. It will be shown that the minimum value of the dark current is not necessarily reached for the thinnest absorbing layers. As a result, experimental data show at λ = 1.55 μm an external quantum efficiency of 75% and a specific detectivity of up to 1013 cm.√Hz.W-1.

Conference Presentation

Citation Download Citation

Jean-Luc Pelouard "InGaAs-based resonant photodetector: a step towards a new generation (Conference Presentation)", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101111T (28 April 2017); https://doi.org/10.1117/12.2252699

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KEYWORDS

Photodetectors

Semiconductors

Indium gallium arsenide

Diffraction

Electromagnetism

Nanophotonics

Optical instrument design

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