Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor

G. Tamamushi; T. Watanabe; J. Mitsushio; A. A. Dubinov; A. Satou; T. Suemitsu; M. Ryzhii; V. Ryzhii; T. Otsuji

doi:10.1117/12.2249983

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27 January 2017 Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor

G. Tamamushi, T. Watanabe, J. Mitsushio, A. A. Dubinov, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, T. Otsuji

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Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 1011126 (2017) https://doi.org/10.1117/12.2249983
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

This paper reviews recent advancement on the research toward graphene-based terahertz (THz) lasers. Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the THz spectral range, which may lead to new types of THz lasers. A forward-biased graphene structure with a lateral p-i-n junction was implemented in a distributed-feedback (DFB) dual-gate graphene-channel FET and observed a single mode emission at 5.2 THz at 100K. The observed spectral linewidth fairly agrees with the modal gain analysis based on DFB-Fabry-Perrot hybrid-cavitymode modeling. Although the results obtained are still preliminary level, the observed emission could be interpreted as THz lasing in population-inverted graphene by carrier-injection.

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G. Tamamushi, T. Watanabe, J. Mitsushio, A. A. Dubinov, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji "Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011126 (27 January 2017); https://doi.org/10.1117/12.2249983

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