27 January 2017 Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor
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Abstract
This paper reviews recent advancement on the research toward graphene-based terahertz (THz) lasers. Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the THz spectral range, which may lead to new types of THz lasers. A forward-biased graphene structure with a lateral p-i-n junction was implemented in a distributed-feedback (DFB) dual-gate graphene-channel FET and observed a single mode emission at 5.2 THz at 100K. The observed spectral linewidth fairly agrees with the modal gain analysis based on DFB-Fabry-Perrot hybrid-cavitymode modeling. Although the results obtained are still preliminary level, the observed emission could be interpreted as THz lasing in population-inverted graphene by carrier-injection.
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G. Tamamushi, G. Tamamushi, T. Watanabe, T. Watanabe, J. Mitsushio, J. Mitsushio, A. A. Dubinov, A. A. Dubinov, A. Satou, A. Satou, T. Suemitsu, T. Suemitsu, M. Ryzhii, M. Ryzhii, V. Ryzhii, V. Ryzhii, T. Otsuji, T. Otsuji, } "Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011126 (27 January 2017); doi: 10.1117/12.2249983; https://doi.org/10.1117/12.2249983
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