27 January 2017 On the Einstein relation under size quantization in heterostructures semiconductor
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With the advent of modern experimental techniques the low dimensional structures having quantum confinement in one, two and three dimensions such as (quantum well (QWs), quantum well wires (QWWs) and quantum dots (QDs) ultrathin films have in the last few years attached much attention not only because of their potential in uncovering new phenomena in computational and theoretical nanoscience but also for new technological applications. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the films leads to the quantum size effect allowing two-dimensional carrier transport parallel to the surface of the film. In this context I shall study the DMR in ultrathin films of IIIV semiconductors.
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Subhamoy Singha Roy, Subhamoy Singha Roy, } "On the Einstein relation under size quantization in heterostructures semiconductor", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011133 (27 January 2017); doi: 10.1117/12.2249554; https://doi.org/10.1117/12.2249554

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