A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum-wells

M. Biswas; A. Balgarkashi; S. Singh; N. Shinde; R. L. Makkar; A. Bhatnagar; Subhananda Chakrabarti

doi:10.1117/12.2251981

27 January 2017 A low-temperature photoluminescence study of GaAs_1-xN_x/GaAs multiple quantum wells

M. Biswas, A. Balgarkashi, S. Singh, N. Shinde, R. L. Makkar, A. Bhatnagar, Subhananda Chakrabarti

Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 1011139 (2017) https://doi.org/10.1117/12.2251981
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Five-period GaAs_1−xN_x/GaAs multiple quantum wells (MQWs) were grown on GaAs(001) substrates under different nitrogen background pressures through solid-source molecular beam epitaxy and the structural and optical properties at low temperature were investigated. High resolution x-ray diffraction revealed sharper satellite peaks observed for GaAs_0.978N_0.022/GaAs MQWs as compared to GaAs_0.982N_0.018/GaAs MQWs, indicating better interfaces. The MQWs with higher nitrogen content exhibited high photoluminescence (PL) intensity, whereas a degraded PL intensity was observed for the latter, attributed to reduction in surface recombination with high nitrogen incorporation. Moreover, the spectrum for the MQWs with higher nitrogen content was observed to be consisted of several Gaussian spectra, indicating thickness variation of QWs caused by randomness in distribution of N atoms. In the low energy regime of PL, a long asymmetric tail was observed because of nitrogen introduced potential fluctuations. Rapid thermal annealing enhanced PL intensity by multi-fold and substantially reduced the full width at maximum because of homogenization of MQWs. This investigation could enhance understandings of the MQWs-based optoelectronic devices.

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M. Biswas, A. Balgarkashi, S. Singh, N. Shinde, R. L. Makkar, A. Bhatnagar, and Subhananda Chakrabarti "A low-temperature photoluminescence study of GaAs_1-xN_x/GaAs multiple quantum wells", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011139 (27 January 2017); https://doi.org/10.1117/12.2251981

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KEYWORDS

Gallium arsenide

Nitrogen

Annealing

Optical properties

Satellites

Chemical species

Luminescence

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