20 February 2017 Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks
Author Affiliations +
Abstract
We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Bendayan, Roi Sabo, Roee Zolberg, Yaakov Mandelbaum, Avraham Chelly, Avi Karsenty, "Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks", Proc. SPIE 10112, Photonic and Phononic Properties of Engineered Nanostructures VII, 101122A (20 February 2017); doi: 10.1117/12.2252681; https://doi.org/10.1117/12.2252681
PROCEEDINGS
8 PAGES


SHARE
Back to Top