SPIE OPTO | JAN 28 - FEB 2 2017
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV
Proceedings Volume 10114 is from: Logo
Jan 28 - Feb 2 2017
San Francisco, California, United States
Front Matter: Volume 10114
Proc. SPIE 10114, Front Matter: Volume 10114, 1011401(11 May 2017);doi: 10.1117/12.2276128
Nanowire Devices II
Proc. SPIE 10114, Lasing in a single nanowire with quantum dots, 1011406(20 February 2017);doi: 10.1117/12.2256033
Proc. SPIE 10114, Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources, 1011409(20 February 2017);doi: 10.1117/12.2252507
Quantum Dot Characterization
Proc. SPIE 10114, Shape and confinement control in mid and far infrared nanocrystals, 101140B(20 February 2017);doi: 10.1117/12.2250160
Proc. SPIE 10114, Polarized and asymmetric emission of single colloidal nanoplatelets (Conference Presentation), 101140D();doi: 10.1117/12.2255041
Nanowire Materials
Proc. SPIE 10114, Metal-oxide-semiconductor plasmonic nanorod lasers (Conference Presentation), 101140E();doi: 10.1117/12.2257098
Proc. SPIE 10114, MBE growth of ordered III-nitride nano/microrods: from classical/quantum light sources to nanotransistors and pseudosubstrates (Conference Presentation), 101140G();doi: 10.1117/12.2257104
Nanowire Characteristics
Proc. SPIE 10114, Quantum optics with nanowires (Conference Presentation), 101140I();doi: 10.1117/12.2257560
Proc. SPIE 10114, Influence of droplet size on the growth of high-quality self-catalyzed GaAsP nanowires, 101140K(20 February 2017);doi: 10.1117/12.2249878
Quantum Dot Devices and Materials
Proc. SPIE 10114, Optical characteristics of InAlAs/GaAlAs/GaAs quantum dots (Conference Presentation), 101140N();doi: 10.1117/12.2251605
Proc. SPIE 10114, Growth scheme for quantum dots with low fine structure splitting at telecom wavelengths (Conference Presentation), 101140O();doi: 10.1117/12.2252159
Proc. SPIE 10114, Highly ordered Ga(As)Sb quantum dots grown on pre-structured GaAs, 101140P(20 February 2017);doi: 10.1117/12.2252221
Plasmonic and Colloidal Nanostructures
Proc. SPIE 10114, Low-temperature photoluminescence studies in epitaxially-grown GaAsN/InAs/GaAsN quantum-dot-in-well structures emitting at 1.31 um, 101140Q(20 February 2017);doi: 10.1117/12.2250527
Proc. SPIE 10114, Time resolved photoluminescence study of magnetic CdSe/CdMnS/CdS core/multi-shell nanoplatelets, 101140R(20 February 2017);doi: 10.1117/12.2252266
Proc. SPIE 10114, Local characterization of light trapping effects of metallic and dielectric nanoparticles in ultra-thin Cu(In,Ga)Se2 solar cells via scanning near-field optical microscopy, 101140S(20 February 2017);doi: 10.1117/12.2253223
Proc. SPIE 10114, Investigating the influence of ligands on the surface-state emission of colloidal CdSe quantum dots, 101140T(20 February 2017);doi: 10.1117/12.2253441
Poster Session
Proc. SPIE 10114, Study of the nonlinear optical properties of CdS quantum dots in phosphate glass, 101140U(20 February 2017);doi: 10.1117/12.2250209
Proc. SPIE 10114, Fabrication of diffraction gratings with electrically variable pitch and their effect on surface plasmon resonance, 101140V(20 February 2017);doi: 10.1117/12.2249176
Proc. SPIE 10114, Light-emitting and photovoltaic devices based on quantum well-dots hybrid nanostructures, 101140Y(20 February 2017);doi: 10.1117/12.2249867
Proc. SPIE 10114, Delay characteristics comparison of coherently coupled high-Q multi-cavity array and single embedded quantum dot cavity systems, 101140Z(20 February 2017);doi: 10.1117/12.2250382
Proc. SPIE 10114, Impact of varying barrier thickness on the optical characteristics of multilayer InAs/GaAs QDIPs, 1011410(20 February 2017);doi: 10.1117/12.2250507
Proc. SPIE 10114, A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers, 1011412(20 February 2017);doi: 10.1117/12.2251290
Proc. SPIE 10114, Biosensing characteristics of InAs nanowire transistors grown by MOCVD, 1011416(23 February 2017);doi: 10.1117/12.2253637
Proc. SPIE 10114, Analytical study of optical activity of chiral-shape nanocrystals, 1011418(20 February 2017);doi: 10.1117/12.2256985
Proc. SPIE 10114, Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy, 1011419(20 February 2017);doi: 10.1117/12.2267737
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