The optical characterization which has been carried out consists of the emission analysis for different NP geometries. We measured NPs with different combinations of pitch (of the order of a few μm) and diameter (of the order of tens of nm). A comparison of intensities for the various NPs provides us with the most efficient geometry. The quality of the crystal grown has been studied from temperature-dependent photoluminescence (PL). A red shift and a significant reduction of the intensity of the NP emission are observed with an increase in temperature. The results also show the presence of two non-radiative recombination channels when the intensity peaks at different temperatures are analyzed with the activation energy function.
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J. S. D. Morales, S. Gandan, D. Ren, Tomasz J. Ochalski, Diana L. Huffaker, "Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources," Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 1011409 (20 February 2017);