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20 February 2017 Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources
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In this work, we study the optical properties and emission dynamics of the novel nanostructure p-GaAs nanopillars (NPs) on Si. The integration of III-V optoelectronics on Si substrates is essential for next-generation high-speed communications. NPs on Si are good candidates as gain media in monolithically integrated small-scale lasers on silicon. In order to develop this technology, an in-depth knowledge of the NP structure is necessary to resolve its optimal optical properties.

The optical characterization which has been carried out consists of the emission analysis for different NP geometries. We measured NPs with different combinations of pitch (of the order of a few μm) and diameter (of the order of tens of nm). A comparison of intensities for the various NPs provides us with the most efficient geometry. The quality of the crystal grown has been studied from temperature-dependent photoluminescence (PL). A red shift and a significant reduction of the intensity of the NP emission are observed with an increase in temperature. The results also show the presence of two non-radiative recombination channels when the intensity peaks at different temperatures are analyzed with the activation energy function.
Conference Presentation
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J. S. D. Morales, S. Gandan, D. Ren, Tomasz J. Ochalski, and Diana L. Huffaker "Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources", Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 1011409 (20 February 2017);

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