20 February 2017 A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers
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Abstract
Epitaxially-grown 10-layer coupled InAs quantum dots with GaAsN/GaAs barrier layers have been investigated. The PL spectra was seen to be a complex convolution of bimodal distribution of QDs along with an asymmetric signature introduced by incorporation of nitrogen into the structures. Reducing the GaAsN/GaAs barrier thickness (from 2/16nm to 2/8nm) resulted in an improvement of PL linewidth as low as 20meV of the dominant PL peak for the sample with thinnest barrier layer. A blueshift in emission was observed due to higher indium intermixing as a result of an increase in overall strain in the multilayer structure. The highly asymmetric exponential tail signature evident from the PL spectra of as-grown samples indicated a higher presence of localized N-induced excitonic states near the conduction band edge. Samples with thicker barriers showed relatively lower asymmetry compared to samples with thinner barriers. Also, samples with thinner barriers showed an arrest in blueshift in the PL spectra with annealing temperature indicating thermal stability.
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Akshay Balgarkashi, Akshay Balgarkashi, Mahitosh Biswas, Mahitosh Biswas, Sandeep Singh, Sandeep Singh, Debabrata Das, Debabrata Das, Anuj Bhatnagar, Anuj Bhatnagar, Roshan Makkar, Roshan Makkar, Nilesh Shinde, Nilesh Shinde, Subhananda Chakrabarti, Subhananda Chakrabarti, } "A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers", Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 1011412 (20 February 2017); doi: 10.1117/12.2251290; https://doi.org/10.1117/12.2251290
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