23 February 2017 Biosensing characteristics of InAs nanowire transistors grown by MOCVD
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Abstract
We demonstrated the ion-sensitive field-effect transistors (IS-FETs) based on nanowires (NWs) with different diameters and doping concentrations to obtain the high sensitivity and various applications. The growth of the catalyst-free InAs NWs was carried out using a horizontal reactor MOCVD system (AIXTRON Inc.). A p-type Si (111) wafer (ρ = 1 -10 Ω-cm) was prepared for the NW growth. Here, NWs with diameters of around 50 ~ 150 nm were grown and the doping concentration also was changed around x±1016~18 /cm2. IS-FETs with the grown InAs NWs were fabricated using the photolithography and the lift-off process. The gas sensing characteristics have been investigated through studying the gate response of the NW conductance in different ambient conditions.
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Doo Gun Kim, Jeongwoo Hwang, Seon Hoon Kim, Hyun Chul Ki, Tae Un Kim, Jae Cheol Shin, Young Wan Choi, "Biosensing characteristics of InAs nanowire transistors grown by MOCVD", Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 1011416 (23 February 2017); doi: 10.1117/12.2253637; https://doi.org/10.1117/12.2253637
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