20 February 2017 Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy
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InAs nanowires directly integrated on Si platform show great promise in fabricating next generation mid-infrared optoelectronic devices. In this study we demonstrated the growth of catalyst-free, selective-area InAs nanowire arrays on electron beam patterned Si3N4/Si(111) by molecular beam epitaxy. Growth parameters were studied, and nanowire growth kinetics dependence on patterned mask opening diameter and interwire distance was investigated. Under certain growth conditions, nanowire diameter was found to be relatively independent of nanohole diameter and pitch. We also realized the growth of randomly-nucleated, self-assembled nanowires on Si(111) and investigated the temperature, flux influence on nanowire morphology.
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K. Zhang, K. Zhang, V. Ray, V. Ray, P. Herrera-Fierro, P. Herrera-Fierro, J. R. Sink, J. R. Sink, F. Toor, F. Toor, J. P. Prineas, J. P. Prineas, } "Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy", Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 1011419 (20 February 2017); doi: 10.1117/12.2267737; https://doi.org/10.1117/12.2267737

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