10 March 1989 Control Of Reactive Deposition Processes By In-Situ Ellipsometry
Author Affiliations +
Proceedings Volume 1012, In-Process Optical Measurements; (1989) https://doi.org/10.1117/12.949323
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Ellipsometric measurement methods allow the characterization of interfaces or thin films between two media during deposition processes. The non-perturbing character combined with a remarkable sensitivity makes this optical technique suitable for in-situ measurements. The study of the complex refractive index as a function of the film thickness allows the control of inhomogeneous layers of dielectric and metallic materials. The present paper discusses the in-situ control of DC-sputtered silicon oxide, silicon nitride and titanium oxide films as well as electron-beam-gun evaporated films consisting of a mixture of different materials. The possibility of the production of preselected inhomogeneous layers by using oxide-nitride films will be demonstrated. The influences of different gas-control techniques on the optical properties will be shown.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Schwiecker, H. Schwiecker, K. H. Hammann, K. H. Hammann, U. Schneider, U. Schneider, } "Control Of Reactive Deposition Processes By In-Situ Ellipsometry", Proc. SPIE 1012, In-Process Optical Measurements, (10 March 1989); doi: 10.1117/12.949323; https://doi.org/10.1117/12.949323

Back to Top