10 March 1989 Control Of Reactive Deposition Processes By In-Situ Ellipsometry
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Proceedings Volume 1012, In-Process Optical Measurements; (1989) https://doi.org/10.1117/12.949323
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
Ellipsometric measurement methods allow the characterization of interfaces or thin films between two media during deposition processes. The non-perturbing character combined with a remarkable sensitivity makes this optical technique suitable for in-situ measurements. The study of the complex refractive index as a function of the film thickness allows the control of inhomogeneous layers of dielectric and metallic materials. The present paper discusses the in-situ control of DC-sputtered silicon oxide, silicon nitride and titanium oxide films as well as electron-beam-gun evaporated films consisting of a mixture of different materials. The possibility of the production of preselected inhomogeneous layers by using oxide-nitride films will be demonstrated. The influences of different gas-control techniques on the optical properties will be shown.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Schwiecker, H. Schwiecker, K. H. Hammann, K. H. Hammann, U. Schneider, U. Schneider, } "Control Of Reactive Deposition Processes By In-Situ Ellipsometry", Proc. SPIE 1012, In-Process Optical Measurements, (10 March 1989); doi: 10.1117/12.949323; https://doi.org/10.1117/12.949323
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