17 February 2017 Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling
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Abstract
Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV- measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.
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Jonna Tiira, Ivan Radevici, Tuomas Haggren, Teemu Hakkarainen, Pyry Kivisaari, Jari Lyytikäinen, Arto Aho, Antti Tukiainen, Mircea Guina, Jani Oksanen, "Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling", Proc. SPIE 10121, Optical and Electronic Cooling of Solids II, 1012109 (17 February 2017); doi: 10.1117/12.2250843; https://doi.org/10.1117/12.2250843
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