17 February 2017 Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures
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Abstract
Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaInP|GaAs double heterostructures (DHS) has never been realized. This is due to an unknown source of parasitic absorption. Prior studies have ruled out the possibility of the bulk absorption from the GaAs layer. Thus it is thought to be either at the air- GaInP interface, through the presence of dangling bonds, or in bulk GaInP through impurities. Using two-color thermallens calorimetry (based on the Z-scan technique), this study indicates that that the parasitic absorption likely originates from the GaInP bulk layers.
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Nathan Giannini, Nathan Giannini, Zhou Yang, Zhou Yang, Alexander R. Albrecht, Alexander R. Albrecht, Mansoor Sheik-Bahae, Mansoor Sheik-Bahae, } "Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures", Proc. SPIE 10121, Optical and Electronic Cooling of Solids II, 101210F (17 February 2017); doi: 10.1117/12.2254702; https://doi.org/10.1117/12.2254702
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