25 February 2017 50Gb/s PAM-4 oxide VCSEL development progress at Broadcom
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Abstract
This paper will review the device design and performance of Broadcom’s 50Gb/s PAM-4 VCSEL to enable the next generation of transceivers using a PAM-4 advanced modulation scheme at 25-28 GBd. The VCSEL has been optimized to minimize noise and improve dynamic performance for cleaner eyes. Preliminary wear out lifetime studies indicate that the time to 1% failure exceeds 10 years, making the VCSELs suitable for data communication applications.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingyi Wang, Jingyi Wang, M. V. Ramana Murty, M. V. Ramana Murty, Charlie Wang, Charlie Wang, David Hui, David Hui, Ann Lehman Harren, Ann Lehman Harren, Hsu-Hao Chang, Hsu-Hao Chang, Zheng-Wen Feng, Zheng-Wen Feng, Thomas R. Fanning, Thomas R. Fanning, Aaditya Sridhara, Aaditya Sridhara, Sumitro-Joyo Taslim, Sumitro-Joyo Taslim, Xinle Cai, Xinle Cai, Jason Chu, Jason Chu, Laura M. Giovane, Laura M. Giovane, } "50Gb/s PAM-4 oxide VCSEL development progress at Broadcom", Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 1012202 (25 February 2017); doi: 10.1117/12.2250211; https://doi.org/10.1117/12.2250211
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