25 February 2017 50Gb/s PAM-4 oxide VCSEL development progress at Broadcom
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This paper will review the device design and performance of Broadcom’s 50Gb/s PAM-4 VCSEL to enable the next generation of transceivers using a PAM-4 advanced modulation scheme at 25-28 GBd. The VCSEL has been optimized to minimize noise and improve dynamic performance for cleaner eyes. Preliminary wear out lifetime studies indicate that the time to 1% failure exceeds 10 years, making the VCSELs suitable for data communication applications.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingyi Wang, M. V. Ramana Murty, Charlie Wang, David Hui, Ann Lehman Harren, Hsu-Hao Chang, Zheng-Wen Feng, Thomas R. Fanning, Aaditya Sridhara, Sumitro-Joyo Taslim, Xinle Cai, Jason Chu, and Laura M. Giovane "50Gb/s PAM-4 oxide VCSEL development progress at Broadcom", Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 1012202 (25 February 2017); doi: 10.1117/12.2250211; https://doi.org/10.1117/12.2250211

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