Hybrid vertical-cavity laser integration on silicon

Emanuel P. Haglund; Sulakshna Kumari; Johan S. Gustavsson; Erik Haglund; Gunther Roelkens; Roel G. Baets; Anders Larsson

doi:10.1117/12.2256983

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25 February 2017 Hybrid vertical-cavity laser integration on silicon

Emanuel P. Haglund, Sulakshna Kumari, Johan S. Gustavsson, Erik Haglund, Gunther Roelkens, Roel G. Baets, Anders Larsson

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Proceedings Volume 10122, Vertical-Cavity Surface-Emitting Lasers XXI; 101220H (2017) https://doi.org/10.1117/12.2256983
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.

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Emanuel P. Haglund, Sulakshna Kumari, Johan S. Gustavsson, Erik Haglund, Gunther Roelkens, Roel G. Baets, and Anders Larsson "Hybrid vertical-cavity laser integration on silicon", Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220H (25 February 2017); https://doi.org/10.1117/12.2256983

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