20 February 2017 High-bandwidth temperature-stable 1.55-μm quantum dot lasers
Author Affiliations +
Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 1012306 (2017) https://doi.org/10.1117/12.2255749
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
An overview is given about the recent improvement in 1.55 μm QD lasers for direct modulation. Based on improved QD epitaxy, which reduces the inhomogeneous size distribution, record values in small signal modulation bandwidth of more than 15 GHz and in digital modulation of up to 35 GBit/s were obtained. Due to the high modal gain and robust ground state transition, the temperature dependence of the laser performance could be very much improved with characteristic temperatures of T0 = 125 K and T1 near to 400 K. This allow a temperature stable modulation bandwidth between 15-60 °C of (14 +/- 1) GHz sufficient for 25 GBit/s digital modulation.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Banyoudeh, S. Banyoudeh, O. Eyal, O. Eyal, A. Abdollahinia, A. Abdollahinia, F. Schnabel, F. Schnabel, V. Sichkovskyi, V. Sichkovskyi, J. P. Reithmaier, J. P. Reithmaier, G. Eisenstein, G. Eisenstein, } "High-bandwidth temperature-stable 1.55-μm quantum dot lasers", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 1012306 (20 February 2017); doi: 10.1117/12.2255749; https://doi.org/10.1117/12.2255749
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