20 February 2017 GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs
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Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101230A (2017) https://doi.org/10.1117/12.2254504
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
The range of applications of blue and green lasers is increasing from year to year. Driving factors are costs and performance. On one hand we study the characteristics of low power R&D c-plane laser structures with improved Gaussian vertical and horizontal beam profile: We present new best values for efficiencies of single mode green lasers of 10.8% at 517nm and new long wavelength data at 532nm with efficiency of 6.5%. Furthermore, we present a new R&D design of a blue single mode laser diode with a very low threshold of 8.5mA. On the other hand, recent R&D results on broad area multi-mode power designs are shown: Efficiencies of 43% at 4W optical output power are achieved. Lifetime tests as long as 10000h are presented. High reliability is reached by a new facet design.
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Uwe Strauss, Andre Somers, Urs Heine, Teresa Wurm, Matthias Peter, Christoph Eichler, Sven Gerhard, Georg Bruederl, Soenke Tautz, Bernhard Stojetz, Andreas Loeffler, Harald Koenig, "GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230A (20 February 2017); doi: 10.1117/12.2254504; https://doi.org/10.1117/12.2254504
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