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20 April 2017 InP-on-SOI electrically injected nanolaser diodes (Conference Presentation)
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Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101230L (2017)
Event: SPIE OPTO, 2017, San Francisco, California, United States
The development of energy-efficient ultra-compact nanolaser diodes integrated in a Silicon photonic platform is of paramount importance for the deployment of optical interconnects for intra-chip communications. In this work, we present our results on InP-based electrically injected photonic crystal (PhC) nanolaser integrated on a SOI waveguide circuitry. The lasers emit at room temperature in a continuous wave regime at 1560nm and exhibit thresholds of 0.1mA at 1V. We measure more than 100μW of light coupled into the SOI waveguides giving a wall-plug efficiency greater than 10%. The principle of the lasers relies on the use of a 1D PhC nanocavity made of InP-based materials positioned on top of a SOI waveguide to enable evanescent wave coupling. More in details, the laser cavity is a 650nm-wide rib waveguide drilled with a single row of equally sized holes (radius~100nm). The distance between the holes is varied to obtain Q-factors larger than 106 for a structure fully encapsulated in silica with material volume of the order of the cubic wavelength. Vertically, the InP heterostructure is a 450nm thick NIP junction embedding 5 strained InGaAsP quantum wells emitting at 1.53μm. By smartly positioning the metallic contacts, this configuration enables the efficient electrical injection of electron-holes pairs within the cavity without inducing optical losses which led us to demonstrate the laser emission coupled ta a Si waveguide.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guillaume Crosnier, Dorian Sanchez, Paul Monnier, Isabelle Sagnes, Sophie Bouchoule, Grégoire Beaudoin, Rama Raj, and Fabrice Raineri "InP-on-SOI electrically injected nanolaser diodes (Conference Presentation)", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230L (20 April 2017);


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