20 February 2017 High performance 5.6μm quantum cascade lasers
Author Affiliations +
Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101230R (2017) https://doi.org/10.1117/12.2250922
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
5.6 μm quantum cascade lasers based on Al 0.78 In 0.22 As/In 0.69 Ga 0.31 As active region composition with measured pulsed room temperature wall plug efficiency of 28.3% are reported. Injection efficiency for the upper laser level of 75% was measured for the new design by testing devices with variable cavity length. Threshold current density of 1.7kA/cm2 and slope efficiency of 4.9W/A were measured for uncoated 3.15mm × 9μm lasers. Threshold current density and slope efficiency dependence on temperature in the range from 288K to 348K for the new structure can be described by characteristic temperatures T0 ~ 140K and T1 ~710K, respectively. Experimental data for inverse slope efficiency dependence on cavity length for 15-stage quantum cascade lasers with the same design are also presented. When combined with the 40-stage device data, the new data allowed for separate evaluation of the losses originating from the active region and from the cladding layers of the laser structure. Specifically, the active region losses for the studied design were found to be 0.77 cm-1, while cladding region losses - 0.33 cm-1. The data demonstrate that active region losses in mid wave infrared quantum cascade lasers largely define total waveguide losses and that their reduction should be one of the main priorities in the quantum cascade laser design.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Suttinger, M. Suttinger, R. Go, R. Go, P. Figueiredo, P. Figueiredo, A. Todi, A. Todi, Hong Shu, Hong Shu, A. Lyakh, A. Lyakh, } "High performance 5.6μm quantum cascade lasers", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230R (20 February 2017); doi: 10.1117/12.2250922; https://doi.org/10.1117/12.2250922
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

High power 1.9 3.3 um type I quantum well cascade...
Proceedings of SPIE (February 19 2017)
Quantum-cascade lasers without injector regions
Proceedings of SPIE (February 25 2007)
GaSb based 1.9 to 2.4 µm quantum well diode...
Proceedings of SPIE (March 31 2005)
Characteristics of CW violet laser diodes grown by MBE
Proceedings of SPIE (February 21 2006)

Back to Top