20 February 2017 Terahertz difference frequency generation in quantum cascade lasers on silicon
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Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 1012316 (2017) https://doi.org/10.1117/12.2252585
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
We demonstrate that an application of a III-V-on-silicon hybrid concept to terahertz (THz) Cherenkov difference frequency generation (DFG) quantum cascade laser (QCL) sources (THz DFG-QCLs) can dramatically improve THz output power and mid-infrared-to-THz conversion efficiency. Completely processed THz DFG-QCLs grown on a 660-μm-thick native InP substrate are transfer-printed onto a 1-mm-thick high-resistive Si substrate using a 100-nm-thick SU-8 as an adhesive layer. Room temperature device performance of the reference InP and hybrid Si THz DFG-QCLs of the same ridge width (22 μm) and cavity length (4.2 mm) have been experimentally compared. The target THz frequency of 3.5 THz is selected for both devices using the dual-period first order surface gratings to select the mid-infrared pump wavelength of 994 cm-1 and 1110 cm-1. At the maximum bias current, the reference InP and hybrid Si devices produced THz power of 50 μW and 270 μW, respectively. The mid-infrared-to-THz conversion efficiency corresponds to 60 μW/W2 and 480 μW/W2, respectively, resulting in 5 times higher THz power and 8 times higher conversion efficiency from the best-performing hybrid devices. A hybrid Si device integrated in a Littrow external-cavity setup showed wavelength tuning from 1.3 THz to 4.3 THz with beam-steering free operation.
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Seungyong Jung, Jae Hyun Kim, Yifan Jiang, Karun Vijayraghavan, Mikhail A. Belkin, "Terahertz difference frequency generation in quantum cascade lasers on silicon", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 1012316 (20 February 2017); doi: 10.1117/12.2252585; https://doi.org/10.1117/12.2252585
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