20 February 2017 1030nm DBR tapered diode laser with up to 16 W of optical output power
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Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101231B (2017) https://doi.org/10.1117/12.2251845
Event: SPIE OPTO, 2017, San Francisco, California, United States
A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with optimized vertical layer structure and lateral design is presented. At a heatsink temperature of 15°C the developed laser provides up to 16 W of optical output power. The maximum electro-optical efficiency is 57%. Intrinsic wavelength stabilization is obtained by a 7th order DBR grating and results in a narrowband emission over the whole power range. Ion implantation next to the ridge-waveguide is applied in order to suppress propagation of unwanted lateral side modes. The highest diffraction-limited central lobe power measured for this device is 9.1 W. With these properties the presented high brightness laser is suitable for applications such as nonlinear frequency conversion.
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A. Müller, A. Müller, C. Zink, C. Zink, J. Fricke, J. Fricke, F. Bugge, F. Bugge, O. Brox, O. Brox, G. Erbert, G. Erbert, B. Sumpf, B. Sumpf, } "1030nm DBR tapered diode laser with up to 16 W of optical output power", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231B (20 February 2017); doi: 10.1117/12.2251845; https://doi.org/10.1117/12.2251845

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