20 February 2017 On-chip unstable resonator cavity 2-μm quantum well lasers
Author Affiliations +
Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101231D (2017) https://doi.org/10.1117/12.2249696
Event: SPIE OPTO, 2017, San Francisco, California, United States
Focused ion beam milling was used to fabricate on-chip unstable resonator cavity quantum well laser devices. A cylindrical mirror was formed at the back facet of the broad area device emitting near 2 μm. Compared to the Fabry-Pérot cavity device, the unstable resonator cavity device exhibits a 2x diffraction limited beam. The preliminary results demonstrate that a much higher brightness can be reached in this class of broad area devices.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi Yang, Alan H. Paxton, Chunte A. Lu, Timothy C. Newell, Ron Kaspi, "On-chip unstable resonator cavity 2-μm quantum well lasers", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231D (20 February 2017); doi: 10.1117/12.2249696; https://doi.org/10.1117/12.2249696

Back to Top