20 February 2017 On-chip unstable resonator cavity 2-μm quantum well lasers
Author Affiliations +
Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101231D (2017) https://doi.org/10.1117/12.2249696
Event: SPIE OPTO, 2017, San Francisco, California, United States
Focused ion beam milling was used to fabricate on-chip unstable resonator cavity quantum well laser devices. A cylindrical mirror was formed at the back facet of the broad area device emitting near 2 μm. Compared to the Fabry-Pérot cavity device, the unstable resonator cavity device exhibits a 2x diffraction limited beam. The preliminary results demonstrate that a much higher brightness can be reached in this class of broad area devices.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi Yang, Chi Yang, Alan H. Paxton, Alan H. Paxton, Chunte A. Lu, Chunte A. Lu, Timothy C. Newell, Timothy C. Newell, Ron Kaspi, Ron Kaspi, } "On-chip unstable resonator cavity 2-μm quantum well lasers", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231D (20 February 2017); doi: 10.1117/12.2249696; https://doi.org/10.1117/12.2249696

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