20 February 2017 Long-term reliability study and failure analysis of quantum cascade lasers
Author Affiliations +
Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101231J (2017) https://doi.org/10.1117/12.2255069
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Here we present lifetime test results of 4 groups of quantum cascade lasers (QCL) under various aging conditions including an accelerated life test. The total accumulated life time exceeds 1.5 million device·hours, which is the largest QCL reliability study ever reported. The longest single device aging time was 46.5 thousand hours (without failure) in the room temperature test. Four failures were found in a group of 19 devices subjected to the accelerated life test with a heat-sink temperature of 60 °C and a continuous-wave current of 1 A. Visual inspection of the laser facets of failed devices revealed an astonishing phenomenon, which has never been reported before, which manifested as a dark belt of an unknown substance appearing on facets. Although initially assumed to be contamination from the environment, failure analysis revealed that the dark substance is a thermally induced oxide of InP in the buried heterostructure semiinsulating layer. When the oxidized material starts to cover the core and blocks the light emission, it begins to cause the failure of QCLs in the accelerated test. An activation energy of 1.2 eV is derived from the dependence of the failure rate on laser core temperature. With the activation energy, the mean time to failure of the quantum cascade lasers operating at a current density of 5 kA/cm2 and heat-sink temperature of 25°C is expected to be 809 thousand hours.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feng Xie, Hong-Ky Nguyen, Herve Leblanc, Larry Hughes, Jie Wang, Dean J. Miller, Kevin Lascola, "Long-term reliability study and failure analysis of quantum cascade lasers", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231J (20 February 2017); doi: 10.1117/12.2255069; https://doi.org/10.1117/12.2255069
PROCEEDINGS
10 PAGES + PRESENTATION

SHARE
RELATED CONTENT

Highly reliable oxide VCSELs for datacom applications
Proceedings of SPIE (June 17 2003)
Highly reliable high speed 1.1um-InGaAs/GaAsP-VCSELs
Proceedings of SPIE (February 06 2009)
Commercialization of VCSELs and VCSEL arrays
Proceedings of SPIE (May 12 2004)
Wear mechanisms in a reliability methodology
Proceedings of SPIE (January 16 2003)
Reliability and commercialization of oxidized VCSEL
Proceedings of SPIE (June 17 2003)

Back to Top