20 February 2017 Al0.45Ga0.55As/GaAs-based single-mode distributed-feedback quantum-cascade lasers with surface gratings
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Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101231M (2017) https://doi.org/10.1117/12.2252791
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Conditions of fabrication of first order distributed-feedback surface gratings designed for single-mode Al0.45Ga0.55As/GaAs quantum cascades lasers with the emission wavelength of about 10μm are presented. The 1 μm-deep rectangular-shaped gratings with the period of about 1.55 μm and duty cycle in the range of 65-71% made by the standard photolithography are demonstrated. The wavenumber difference of about 7 cm-1 at 77 K is observed for the radiation emitted by lasers fabricated from the same epitaxial structure with ridge widths in the range of 15-25 μm. Moreover, the emission wavelength of the lasers could be tuned with temperature at a rate of 1 nm/K in the temperature range of 77-120 K. The full width at half maximum of the emitted spectra is ~ 0.4 cm-1.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anna Szerling, Anna Szerling, Renata Kruszka, Renata Kruszka, Kamil Kosiel, Kamil Kosiel, Marek Wzorek, Marek Wzorek, Krystyna Gołaszewska, Krystyna Gołaszewska, Artur Trajnerowicz, Artur Trajnerowicz, Piotr Karbownik, Piotr Karbownik, Maciej Kuc, Maciej Kuc, Tomasz Czyszanowski, Tomasz Czyszanowski, Michał Walczakowski, Michał Walczakowski, Norbert Palka, Norbert Palka, } "Al0.45Ga0.55As/GaAs-based single-mode distributed-feedback quantum-cascade lasers with surface gratings", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231M (20 February 2017); doi: 10.1117/12.2252791; https://doi.org/10.1117/12.2252791
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