16 February 2017 Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress
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Abstract
This paper demonstrates that when InGaN LEDs are submitted to a constant reverse bias, they can show a time-dependent breakdown, that leads to the catastrophic failure of the devices. By submitting green and blue LEDs to constant voltage stress in the range between -40 V and -60 V we demonstrate that: (i) under reverse bias conditions, current is focused on localized paths, whose positions can be identified by electroluminescence measurements, and that originate from the presence of extended defects; (ii) during a constant voltage stress, the reverse current of the LEDs gradually increases; (iii) for longer stress times, all devices show a time-dependent breakdown; (iv) time-to-failure has an exponential dependence on stress voltage, and is Weibull-distributed.
Conference Presentation
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Carlo De Santi, Carlo De Santi, Matteo Meneghini, Matteo Meneghini, Nicola Renso, Nicola Renso, Matteo Buffolo, Matteo Buffolo, Nicola Trivellin, Nicola Trivellin, Giovanna Mura, Giovanna Mura, Massimo Vanzi, Massimo Vanzi, Andrea Migliori, Andrea Migliori, Vittorio Morandi, Vittorio Morandi, Gaudenzio Meneghesso, Gaudenzio Meneghesso, Enrico Zanoni, Enrico Zanoni, } "Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress", Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240F (16 February 2017); doi: 10.1117/12.2256023; https://doi.org/10.1117/12.2256023
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