16 February 2017 Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
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Abstract
The paper reports the analysis of (In)AlGaN-based UV-B LEDs degradation under constant current stress, and investigates the impact of defects in changing the devices electro-optical performance. The study is based on combined electro-optical characterization, deep-level transient- (DLTS) and photocurrent spectroscopy. UV-B LEDs show a decrease of the optical power during stress, more pronounced at low measuring current levels, indicating that the degradation is related to an increase of Shockley-Read-Hall (SRH) recombination. DLTS measurements allowed the identification of three defects, in particular one ascribed to Mg-related acceptor traps presence. Photocurrent spectroscopy allows the localization of the defects close to the mid-gap.
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Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Tim Wernicke, Michael Kneissl, "Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation", Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240T (16 February 2017); doi: 10.1117/12.2253843; https://doi.org/10.1117/12.2253843
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