16 February 2017 Luminescence distribution in the multi-quantum well region of III-nitride light emitting diodes
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Abstract
We investigate the luminescence distribution in the multi quantum well (MQW) region of polar III-nitride light emitting diodes (LED) operating in the blue spectral range by means of carrier transport simulations. The MQW region is modeled with an equivalent circuit. It is demonstrated that the MQW barriers primarily affect the hole transport. The electron scattering from continuum to bound quantum well states has a major impact on the electron transport. A nearly uniform luminescence distribution in the MQW region is achieved through a re-distribution of the luminescence from the n-side to the p-side QW with increasing current. We show that the re-distribution is seen through a decrease of the ideality factor in the MQW region and promoted by the asymmetry of the electron and hole transport.
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Friedhard Römer, Friedhard Römer, Bernd Witzigmann, Bernd Witzigmann, } "Luminescence distribution in the multi-quantum well region of III-nitride light emitting diodes", Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240Y (16 February 2017); doi: 10.1117/12.2253668; https://doi.org/10.1117/12.2253668
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